AOK60B65H2AL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOK60B65H2AL datasheet

..1. Size:1105K aosemi
aok60b65h2al.pdf pdf_icon

AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

5.1. Size:590K aosemi
aok60b65h1.pdf pdf_icon

AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo

5.2. Size:602K aosemi
aok60b65hq3.pdf pdf_icon

AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic

6.1. Size:1294K aosemi
aok60b65m3.pdf pdf_icon

AOK60B65M3 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci

Otros transistores... AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , SGP30N60 , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 .