AOK60B65H2AL Todos los transistores

 

AOK60B65H2AL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK60B65H2AL
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 416 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 185 pF
   Qgⓘ - Carga total de la puerta, typ: 84 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

AOK60B65H2AL Datasheet (PDF)

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 aok60b65h2al.pdf pdf_icon

AOK60B65H2AL

AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

 5.1. Size:590K  aosemi
 aok60b65h1.pdf pdf_icon

AOK60B65H2AL

AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 5.2. Size:602K  aosemi
 aok60b65hq3.pdf pdf_icon

AOK60B65H2AL

AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic

 6.1. Size:1294K  aosemi
 aok60b65m3.pdf pdf_icon

AOK60B65H2AL

AOK60B65M3TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MG100HF12MRC1 | 6MBI50VW-120-50

 

 
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