AOK75B60D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK75B60D1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.72 V @25℃
trⓘ - Tiempo de subida, typ: 69 nS
Coesⓘ - Capacitancia de salida, typ: 470 pF
Encapsulados: TO247
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AOK75B60D1 datasheet
aok75b60d1.pdf
AOK75B60D1 TM 600V,75A Alpha IGBT with Diode General Description Product Summary AlphaIGBT ( IGBT) technology VCE 600V Low VCE(SAT) enables high efficiencies IC (TC=100 C) 75A Smooth Switching waveforms reduce EMI Better thermal management VCE(sat) (TJ=25 C) 1.72V Minimal gate spike under high dV/dt Applications Welding Machines Solar Inverter
aok75b65h1v.pdf
AOK75B65H1V TM 650V, 75A Alpha IGBT AEC-Q101 Qualified General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 75A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.85V C) High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and
aok75b65h1.pdf
AOK75B65H1 TM 650V, 75A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 75A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.85V C) High efficient turn-on di/dt controllability Very high switching speed Lo
Otros transistores... AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , SGT60U65FD1PT , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 .
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