IXGT28N30 Todos los transistores

IXGH 28N30 VCES = 300 V HiPerFASTTM IGBT IXGT 28N30 IC25 = 56 A VCE(sat)typ = 1.6 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C56 A TO-247 AD IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 112 A SSOA VGE

IXGH 28N30B VCES = 300 V HiPerFASTTM IGBT IXGT 28N30B IC25 = 56 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C56 A TO-268 IC90 TC = 90 C28 A (IXGT) ICM TC = 25 C, 1 ms 112 A G SSOA VGE= 15 V, TV

IXGH 28N30A VCES = 300 V HiPerFASTTM IGBT IXGT 28N30A IC25 = 56 A VCE(sat)typ = 1.85 V tfi(typ) = 120 ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C56 A IC90 TC = 90 C28 A G E ICM TC = 25 C, 1

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8

IXGH 28N90B VCES = 900 V HiPerFASTTM IGBT IXGT 28N90B IC25 = 51 A VCE(SAT) = 2.7 V Preliminary data sheet tfi(typ) = 130 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C51 A IC110 TC = 110 C28 A TO-268 (D3) ICM TC =

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 VCE(sat) 3.5V tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 50 A I