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AOKS40B65H2AL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOKS40B65H2AL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 88 pF
   Paquete / Cubierta: TO247

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AOKS40B65H2AL Datasheet (PDF)

 ..1. Size:882K  aosemi
aoks40b65h2al.pdf

AOKS40B65H2AL AOKS40B65H2AL

AOKS40B65H2ALTM650V, 40A AlphaIGBTGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown VoltageIC (TC=100C) 40A High Efficient Turn-On di/dt ControllabilityVCE(sat) (TJ=25C) 2.05V Very High Switching Speed Low Turn-Off Switching Loss and Softness Very Good EMI BehaviorApplications PFC Circuits Ve

 4.1. Size:801K  aosemi
aoks40b65h1.pdf

AOKS40B65H2AL AOKS40B65H2AL

AOKS40B65H1/AOTS40B65H1TM650V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged

 6.1. Size:898K  aosemi
aoks40b60d1.pdf

AOKS40B65H2AL AOKS40B65H2AL

AOKS40B60D1TM600V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 40A Very high switching speed VCE(sat) (TC=25C) 1.85V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Power factor c

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