AOKS40B65H2AL Todos los transistores

 

AOKS40B65H2AL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOKS40B65H2AL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 88 pF
   Qgⓘ - Carga total de la puerta, typ: 61 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de AOKS40B65H2AL IGBT

   - Selección ⓘ de transistores por parámetros

 

AOKS40B65H2AL Datasheet (PDF)

 ..1. Size:882K  aosemi
 aoks40b65h2al.pdf pdf_icon

AOKS40B65H2AL

AOKS40B65H2ALTM650V, 40A AlphaIGBTGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown VoltageIC (TC=100C) 40A High Efficient Turn-On di/dt ControllabilityVCE(sat) (TJ=25C) 2.05V Very High Switching Speed Low Turn-Off Switching Loss and Softness Very Good EMI BehaviorApplications PFC Circuits Ve

 4.1. Size:801K  aosemi
 aoks40b65h1.pdf pdf_icon

AOKS40B65H2AL

AOKS40B65H1/AOTS40B65H1TM650V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged

 6.1. Size:898K  aosemi
 aoks40b60d1.pdf pdf_icon

AOKS40B65H2AL

AOKS40B60D1TM600V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 40A Very high switching speed VCE(sat) (TC=25C) 1.85V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Power factor c

Otros transistores... AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , TGAN20N135FD , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 .

History: F3L100R12W2H3-B11 | BSM200GAR120DN2 | IXSH45N120 | VS-GT140DA60U | AP50GT60SW-HF | IGW40N120H3

 

 
Back to Top

 


 
.