AOT15B65MQ1 Todos los transistores

 

AOT15B65MQ1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT15B65MQ1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 214 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO220

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AOT15B65MQ1 datasheet

 ..1. Size:654K  aosemi
 aot15b65mq1.pdf pdf_icon

AOT15B65MQ1

AOT15B65MQ1/AOB15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 5.1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf pdf_icon

AOT15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 5.2. Size:1328K  aosemi
 aot15b65m1.pdf pdf_icon

AOT15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 5.3. Size:553K  aosemi
 aot15b65m3.pdf pdf_icon

AOT15B65MQ1

AOT15B65M3 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient Turn-On di/dt controllability Low VCE(sat) enables high efficienci

MOSTRAR MÁS

Otros transistores... AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , MGD623S , AOT20B65M1 , AOT5B60D , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 .

History: T1200TB25A | MMG40A120B6C | NGTB40N120FLWG

 

 

 

 

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