AOT20B65M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT20B65M1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 227 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.1 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 141 pF
Qgⓘ - Carga total de la puerta, typ: 46 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AOT20B65M1 - IGBT
AOT20B65M1 Datasheet (PDF)
aot20b65m1.pdf
AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab
aot20s60.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
aot20n25.pdf
AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aot20s60 aob20s60 aotf20s60.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
aot20s60l.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
aot20c60.pdf
AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max
aot20n60.pdf
AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot20n60l.pdf
AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot20n25l.pdf
AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aot20n25.pdf
isc N-Channel MOSFET Transistor AOT20N25FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aot20n60.pdf
isc N-Channel MOSFET Transistor AOT20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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