IXGT28N30A Todos los transistores

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IXGT28N30A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT28N30A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150W

Tensión colector-emisor (Vce): 300V

Voltaje de saturación colector-emisor (Vce sat): 1.6V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 40A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 15

Capacitancia de salida (Cc), pF: 1500pF

Empaquetado / Estuche: TO268

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IXGT28N30A Datasheet (PDF)

3.1. ixgh28n120b ixgt28n120b.pdf Size:575K _ixys

IXGT28N30A
IXGT28N30A

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C50 A TO-247 AD (IXGH) IC110 TC = 110C28 A ICM TC = 25C, 1 ms 150 A SSOA VGE = 15

3.2. ixgt28n60b.pdf Size:588K _igbt_a

IXGT28N30A
IXGT28N30A

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

3.3. ixgt28n90b.pdf Size:89K _igbt_a

IXGT28N30A
IXGT28N30A

IXGH 28N90B VCES = 900 V HiPerFASTTM IGBT IXGT 28N90B IC25 = 51 A VCE(SAT) = 2.7 V Preliminary data sheet tfi(typ) = 130 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C51 A IC110 TC = 110°C28 A TO-268 (D3) ICM TC =

3.4. ixgt28n120bd1.pdf Size:195K _igbt_a

IXGT28N30A
IXGT28N30A

High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 ≤ VCE(sat) ≤ ≤ 3.5V ≤ ≤ tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V C E (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V TO-268 (IXGT) VGEM Transient ±30 V IC25 TC = 25°C ( Chip Capability ) 50 A I

3.5. ixgt28n120b.pdf Size:572K _igbt_a

IXGT28N30A
IXGT28N30A

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C50 A TO-247 AD (IXGH) IC110 TC = 110°C28 A ICM TC = 25°C, 1 ms 150 A

3.6. ixgt28n60bd1.pdf Size:515K _igbt_a

IXGT28N30A
IXGT28N30A

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A

Otros transistores... IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , HGTG30N60A4 , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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