AOT5B65M1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT5B65M1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 83 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃

trⓘ - Tiempo de subida, typ: 13 nS

Coesⓘ - Capacitancia de salida, typ: 36 pF

Encapsulados: TO220

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AOT5B65M1 datasheet

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AOT5B65M1

AOT5B65M1/AOB5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

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AOT5B65M1

AOT5B60D TM 600V, 5A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 5A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance to o

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