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AOT5B65M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT5B65M1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 83 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.1 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 13 nS
   Coesⓘ - Capacitancia de salida, typ: 36 pF
   Qgⓘ - Carga total de la puerta, typ: 14 nC
   Paquete / Cubierta: TO220
 

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AOT5B65M1 Datasheet (PDF)

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AOT5B65M1

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

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AOT5B65M1

AOT5B60DTM600V, 5A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 5Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to o

Otros transistores... AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D , IRG4PC50UD , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 , AOTF15B65M3 .

 

 
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