AOTF10B65M1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF10B65M1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 30 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 68 pF

Encapsulados: TO220F

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AOTF10B65M1 datasheet

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AOTF10B65M1

AOTF10B65M1 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

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 aotf10b65m2.pdf pdf_icon

AOTF10B65M1

AOTF10B65M2 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 4.2. Size:581K  aosemi
 aotf10b65mq2.pdf pdf_icon

AOTF10B65M1

AOTF10B65MQ2 TM 650V, 10A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 6.1. Size:721K  aosemi
 aotf10b60d2.pdf pdf_icon

AOTF10B65M1

AOTF10B60D2 TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance

MOSTRAR MÁS

Otros transistores... AOT15B60D, AOT15B65M3, AOT15B65MQ1, AOT20B65M1, AOT5B60D, AOT5B65M1, AOT8B65M3, AOTF10B60D2, MBQ40T65FDSC, AOTF10B65M2, AOTF10B65MQ2, AOTF15B60D2, AOTF15B65M2, AOTF15B65M3, AOTF15B65MQ1, AOTF20B65LN2, AOTF20B65M1