AOTF10B65M1 Todos los transistores

 

AOTF10B65M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF10B65M1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Coesⓘ - Capacitancia de salida, typ: 68 pF
   Paquete / Cubierta: TO220F
 

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AOTF10B65M1 Datasheet (PDF)

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 aotf10b65m1.pdf pdf_icon

AOTF10B65M1

AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

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 aotf10b65m2.pdf pdf_icon

AOTF10B65M1

AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 4.2. Size:581K  aosemi
 aotf10b65mq2.pdf pdf_icon

AOTF10B65M1

AOTF10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 6.1. Size:721K  aosemi
 aotf10b60d2.pdf pdf_icon

AOTF10B65M1

AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

MOSTRAR MÁS

Otros transistores... AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , IRGB20B60PD1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 , AOTF15B65M3 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 .

History: F3L15R12W2H3-B27 | IRG4BC20K-S | YGW15N120T3 | NGTB30N120IHRWG | IXGR120N60C2 | IXGK55N120A3H1

 

 
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