AOTF20B65LN2 Todos los transistores

 

AOTF20B65LN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF20B65LN2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 45 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.54 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 23 nS
   Coesⓘ - Capacitancia de salida, typ: 124 pF
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AOTF20B65LN2 Datasheet (PDF)

 ..1. Size:576K  aosemi
aotf20b65ln2.pdf pdf_icon

AOTF20B65LN2

AOTF20B65LN2TM 650V, 20A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very low VCE(sat)VCE(sat) (TJ=25 1.54VC) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of

 5.1. Size:1308K  aosemi
aotf20b65m2.pdf pdf_icon

AOTF20B65LN2

AOTF20B65M2TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 5.2. Size:1283K  aosemi
aotf20b65m1.pdf pdf_icon

AOTF20B65LN2

AOTF20B65M1TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 8.1. Size:331K  aosemi
aotf20n40.pdf pdf_icon

AOTF20B65LN2

AOTF20N40400V,20A N-Channel MOSFETGeneral Description Product Summary VDS500@150The AOTF20N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

Otros transistores... AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 , AOTF15B65M3 , AOTF15B65MQ1 , IRG4PC40W , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , DGC20F65M2 .

 

 
Back to Top

 


AOTF20B65LN2
  AOTF20B65LN2
  AOTF20B65LN2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

tip125 | a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320 | d669a transistor

 


 
.