AOTF5B65M2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF5B65M2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 25 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.1 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 40 pF
Qgⓘ - Carga total de la puerta, typ: 14 nC
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de AOTF5B65M2 - IGBT
AOTF5B65M2 Datasheet (PDF)
aotf5b65m2.pdf
AOTF5B65M2TM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltage IC (TC=100 5AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci
aotf5b65m1.pdf
AOTF5B65M1TM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltage IC (TC=100 5AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci
aotf5b60d.pdf
AOTF5B60DTM600V, 5A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 5Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
aotf5n50.pdf
AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf5n100.pdf
AOT5N100/AOTF5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT5N100 & AOTF5N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 4Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aotf5n50fd.pdf
AOTF5N50FD500V, 5A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF5N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aotf5n50.pdf
isc N-Channel MOSFET Transistor AOTF5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aotf5n100.pdf
isc N-Channel MOSFET Transistor AOTF5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aotf5n50fd.pdf
isc N-Channel MOSFET Transistor AOTF5N50FDFEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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