G50T65DS Todos los transistores

G50T65DS 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 2.0V @ I =50A a

G50T65D 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 2.0V @ I =50A an

G50T65LBBW 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.8V @ IC =50

BLG50T65FDLA IGBT 1 Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

BLG50T65FDKA IGBT 1 Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

BLG50T65FLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

BLG50T65FKA IGBT 1 Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

BLQG50T65FCKA IGBT 1 Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

BLQG50T65FDLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

MSG50T65FQC N-Channel IGBT Features Low gate charge Trench FS Technology Saturation voltage VCE(sat),typ=1.6V @IC=50A and TC=25 Applications General purpose inverter UPS Absolute Ratings(Tc=25 ) Value Parameter Symbol Unit MSG50N65FQC Collector-Emmiter Voltage V 650 V ce I C 100 A *Collector Current-continuous T=25 T=100 50 A I F 100 A Diod

MSG50T65FHC Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) type =1.6V,I =50A and TC =25 C C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage Vces 650 V 100 A Ic T=25 *Collector Current-continuous T=100 50 A Collector Curre