JJT10N65SCD Todos los transistores

 

JJT10N65SCD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT10N65SCD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 136 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 112 nS

Coesⓘ - Capacitancia de salida, typ: 37 pF

Encapsulados: TO263

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JJT10N65SCD datasheet

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JJT10N65SCD

650V 10A Trench and Field Stop IGBT JJT10N65SCD Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

 4.1. Size:2552K  jiejie micro
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JJT10N65SCD

650V 10A Trench and Field Stop IGBT JJT10N65SC Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl

 5.1. Size:2557K  jiejie micro
 jjt10n65st.pdf pdf_icon

JJT10N65SCD

650V 10A Trench and Field Stop IGBT JJT10N65ST Key performance V =650V CE TO-252 I =10A@T =100 C C V =1.8 V CE(sat) C Features High ruggedness performance G 10 s short circuit capability E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl

 5.2. Size:2850K  jiejie micro
 jjt10n65ss.pdf pdf_icon

JJT10N65SCD

650V 10A Trench and Field Stop IGBT JJT10N65SS Key performance V =650V CE TO-220F I =10A@T =100 C C V =1.8 V CE(sat) Features High ruggedness performance 10 s short circuit capability G C E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant App

MOSTRAR MÁS

Otros transistores... DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , FGH60N60SMD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE , JJT50N65UE , JJT50N65UH .

History: DM2G150SH6NE | DM2G200SH12A | MMG75S120B6UN

 

 

 


 
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