JJT6N65SS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT6N65SS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 8 nS
Coesⓘ - Capacitancia de salida, typ: 22 pF
Encapsulados: TO220F
Búsqueda de reemplazo de JJT6N65SS IGBT
- Selección ⓘ de transistores por parámetros
JJT6N65SS datasheet
jjt6n65ss.pdf
650V 6A Trench and Field Stop IGBT JJT6N65SS Key performance V =650V CE TO-220F I =6A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance G C E Very tight parameter distribution Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant App
jjt6n65st.pdf
650V 6A Trench and Field Stop IGBT JJT6N65ST Key performance V =650V CE TO-252 I =6A@T =100 C C V =1.7 V CE(sat) C Features G E High ruggedness performance Very tight parameter distribution Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appli
jjt6n65std.pdf
650V 6A Trench and Field Stop IGBT JJT6N65STD Key performance V =650V CE TO-252 I =6A@T =100 C C V =1.7 V CE(sat) C Features G High ruggedness performance E Very tight parameter distribution Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant
jjt6n65sc.pdf
650V 6A Trench and Field Stop IGBT JJT6N65SC TO-263 Key performance V =650V CE I =6A@T =100 C C V =1.7 V CE(sat) C G Features E High ruggedness performance Very tight parameter distribution Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl
Otros transistores... JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , FGA60N65SMD , JJT6N65ST , JJT6N65STD , JJT75N120SA , JJT75N65HCN , JJT75N65HE , JJT20N65SC , JJT20N65SE , JJT20N65SS .
History: JJT6N65ST
History: JJT6N65ST
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a




