JJT75N65HCN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT75N65HCN
Tipo de transistor: IGBT
Código de marcado: T7565HCN
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 125 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 132 nS
Coesⓘ - Capacitancia de salida, typ: 205 pF
Qgⓘ - Carga total de la puerta, typ: 130 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de JJT75N65HCN IGBT
JJT75N65HCN Datasheet (PDF)
jjt75n65hcn.pdf
650V 75A Trench and Field Stop IGBTJJT75N65HCNKey performance:TO-263 V =650VCE I =75A@T =100C C V =1.8VCE(sat)CFeatures: Trench and field-stop technology.G Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: Hair removal device Flash lig
jjt75n65he.pdf
650V 75A Trench and Field Stop IGBTJJT75N65HEKey performance: V =650VCETO-247 I =75A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib
jjt75n120sa.pdf
1200V 75A Trench and Field Stop IGBTJJT75N120SAKey performance:TO-247PLUS V =1200VCE I =75A@T =100C C V =1.7VCE(sat)Features:G Trench and field-stop technologyCE Easy parallel switching capability Short circuit withstand time 10s Low VCEsat High ruggedness performance RoHS compliantApplications: servo drive Inve
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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