JJT20N65SS Todos los transistores

 

JJT20N65SS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT20N65SS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 53 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO220F

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JJT20N65SS datasheet

 ..1. Size:3385K  jiejie micro
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JJT20N65SS

650V 20A Trench and Field Stop IGBT JJT20N65SS Key performance V =650V CE TO-220F I =20A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.1. Size:3388K  jiejie micro
jjt20n65sc.pdf pdf_icon

JJT20N65SS

650V 20A Trench and Field Stop IGBT JJT20N65SC Key performance TO-263 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) C Features G High ruggedness performance. E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.2. Size:3385K  jiejie micro
jjt20n65se.pdf pdf_icon

JJT20N65SS

650V 20A Trench and Field Stop IGBT JJT20N65SE Key performance TO-247 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) Features G High ruggedness performance. C E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.3. Size:3418K  jiejie micro
jjt20n65sy.pdf pdf_icon

JJT20N65SS

650V 20A Trench and Field Stop IGBT JJT20N65SY Key performance TO-220 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

Otros transistores... JJT6N65SS , JJT6N65ST , JJT6N65STD , JJT75N120SA , JJT75N65HCN , JJT75N65HE , JJT20N65SC , JJT20N65SE , IRG7IC28U , JJT20N65SY , JJT25N120SE , JJT25N135UE , JJT60N65HE , JJT60N65UE , JJT60N65UH , JJT40N120UE , JJT40N135UE .

 

 

 


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