IXGT31N60D1 Todos los transistores

 

IXGT31N60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGT31N60D1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Qgⓘ - Carga total de la puerta, typ: 80 nC
   Paquete / Cubierta: TO268

 Búsqueda de reemplazo de IXGT31N60D1 - IGBT

 

IXGT31N60D1 Datasheet (PDF)

 ..1. Size:52K  ixys
ixgt31n60d1.pdf

IXGT31N60D1 IXGT31N60D1

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 VIGBT with Diode IXGT 31N60D1 IC25 = 60 AVCE(sat) = 1.7 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V GEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C60 A(IXGH)IC90 TC = 90C31 AICM TC = 25C, 1

 5.1. Size:54K  ixys
ixgt31n60.pdf

IXGT31N60D1 IXGT31N60D1

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 VIXGT 31N60 IC25 = 60 AVCE(sat) = 1.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 V C(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-268IC90 TC = 90C31 AICM TC = 25C, 1 ms 80 AGSSOA VGE= 15 V, TVJ = 125C, RG = 1

 9.1. Size:572K  ixys
ixgh32n170a ixgt32n170a.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

 9.2. Size:194K  ixys
ixgt32n120a3.pdf

IXGT31N60D1 IXGT31N60D1

GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75

 9.3. Size:215K  ixys
ixgt30n60c3d1.pdf

IXGT31N60D1 IXGT31N60D1

GenX3TM 600V IGBTsVCES = 600VIXGH30N60C3D1w/ DiodeIC110 = 30AIXGT30N60C3D1VCE(sat) 3.0Vtfi(typ) = 47nsHigh-Speed PT IGBTs for40-100 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VC (Tab)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXG

 9.4. Size:583K  ixys
ixgh30n60c2 ixgt30n60c2.pdf

IXGT31N60D1 IXGT31N60D1

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

 9.5. Size:580K  ixys
ixgt30n60c2.pdf

IXGT31N60D1 IXGT31N60D1

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

 9.6. Size:569K  ixys
ixgt32n170a.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

 9.7. Size:53K  ixys
ixgh35n120b ixgt35n120b.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI

 9.8. Size:219K  ixys
ixgh32n90b2d1 ixgt32n90b2d1.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

 9.9. Size:164K  ixys
ixgh30n60c2d1 ixgt30n60c2d1.pdf

IXGT31N60D1 IXGT31N60D1

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

 9.10. Size:81K  ixys
ixgt32n60c.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =

 9.11. Size:125K  ixys
ixgt32n60bd1.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

 9.12. Size:213K  ixys
ixgt30n120b3d1.pdf

IXGT31N60D1 IXGT31N60D1

VCES = 1200VGenX3TM 1200V IGBT IXGH30N120B3D1IC110 = 30A IXGT30N120B3D1VCE(sat) 3.5Vtfi(typ) = 204nsHigh speed Low Vsat PTIGBTs 3-20 kHz switchingSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C30

 9.13. Size:163K  ixys
ixgt32n60cd1.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D

 9.14. Size:159K  ixys
ixgt30n60c2d1.pdf

IXGT31N60D1 IXGT31N60D1

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

 9.15. Size:576K  ixys
ixgt30n60b2.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

 9.16. Size:120K  ixys
ixgt32n100a3.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

 9.17. Size:202K  ixys
ixgh32n90b2 ixgt32n90b2.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

 9.18. Size:578K  ixys
ixgh30n60b2 ixgt30n60b2.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

 9.19. Size:152K  ixys
ixgt39n60b.pdf

IXGT31N60D1 IXGT31N60D1

HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =

 9.20. Size:52K  ixys
ixgt35n120b.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI

 9.21. Size:217K  ixys
ixgt32n90b2d1.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

 9.22. Size:506K  ixys
ixgt30n60b2d1.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 9.23. Size:152K  ixys
ixgt39n60bd1.pdf

IXGT31N60D1 IXGT31N60D1

HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =

 9.24. Size:199K  ixys
ixgt32n90b2.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

 9.25. Size:573K  ixys
ixgt32n170.pdf

IXGT31N60D1 IXGT31N60D1

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

 9.26. Size:52K  ixys
ixgt35n120c.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical InformationIXGH 35N120C VCES = 1200 VIGBTIXGT 35N120C IC25 = 70 AVCE(sat) = 4.0 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 V(TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C3

 9.27. Size:577K  ixys
ixgh32n170 ixgt32n170.pdf

IXGT31N60D1 IXGT31N60D1

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

 9.28. Size:125K  ixys
ixgt30n60b.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

 9.29. Size:125K  ixys
ixgt32n60b.pdf

IXGT31N60D1 IXGT31N60D1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

 9.30. Size:600K  ixys
ixgh30n60b2d1 ixgt30n60b2d1.pdf

IXGT31N60D1 IXGT31N60D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

Otros transistores... IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IRG7IC28U , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 .

 

 
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