JJT25N135UE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT25N135UE
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 416 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 54 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de JJT25N135UE IGBT
JJT25N135UE datasheet
jjt25n135ue.pdf
1350V 25A Trench and Field Stop IGBT JJT25N135UE Key performance V =1350V CE TO-247 I =25A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R
jjt25n120se.pdf
1200V 25A Trench and Field Stop IGBT JJT25N120SE Key performance V =1200V CE TO-247 I =25A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro
Otros transistores... JJT75N120SA , JJT75N65HCN , JJT75N65HE , JJT20N65SC , JJT20N65SE , JJT20N65SS , JJT20N65SY , JJT25N120SE , MBQ50T65FDSC , JJT60N65HE , JJT60N65UE , JJT60N65UH , JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE .
History: JJT60N65HE
History: JJT60N65HE
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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