JJT60N65HE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT60N65HE  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 394 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO247

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JJT60N65HE datasheet

 ..1. Size:3882K  jiejie micro
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JJT60N65HE

650V 60A Trench and Field Stop IGBT JJT60N65HE Key performance V =650V CE TO-247 I =60A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib

 6.1. Size:3905K  jiejie micro
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JJT60N65HE

650V 60A Trench and Field Stop IGBT JJT60N65UE Key performance V =650V CE TO-247 I =60A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

 6.2. Size:3908K  jiejie micro
 jjt60n65uh.pdf pdf_icon

JJT60N65HE

650V 60A Trench and Field Stop IGBT JJT60N65UH Key performance TO-3P V =650V CE I =60A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. G C Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machin

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