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JJT40N65HE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT40N65HE
   Tipo de transistor: IGBT + Diode
   Código de marcado: T4065HE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 59 nS
   Coesⓘ - Capacitancia de salida, typ: 101 pF
   Qgⓘ - Carga total de la puerta, typ: 80 nC
   Paquete / Cubierta: TO247
 

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JJT40N65HE Datasheet (PDF)

 ..1. Size:3304K  jiejie micro
 jjt40n65he.pdf pdf_icon

JJT40N65HE

650V 40A Trench and Field Stop IGBTJJT40N65HEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

 6.1. Size:3082K  jiejie micro
 jjt40n65uh.pdf pdf_icon

JJT40N65HE

650V 40A Trench and Field Stop IGBTJJT40N65UHKey performance:TO-3P V =650VCE I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.2. Size:3206K  jiejie micro
 jjt40n65ue.pdf pdf_icon

JJT40N65HE

650V 40A Trench and Field Stop IGBTJJT40N65UEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.3. Size:3100K  jiejie micro
 jjt40n65le.pdf pdf_icon

JJT40N65HE

650V 40A Trench and Field Stop IGBTJJT40N65LEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.4VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: EV chargersPackage parametersTy

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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