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JJT30N65SS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT30N65SS
   Tipo de transistor: IGBT + Diode
   Código de marcado: T3065SS
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 50 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.9 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 39 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Qgⓘ - Carga total de la puerta, typ: 103 nC
   Paquete / Cubierta: TO220F
 

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JJT30N65SS Datasheet (PDF)

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JJT30N65SS

650V 30A Trench and Field Stop IGBTJJT30N65SSKey performance: V =650VCETO-220F I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.1. Size:3803K  jiejie micro
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JJT30N65SS

650V 30A Trench and Field Stop IGBTJJT30N65SEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GC Positive V temperature coefficient.CE (sat)E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.2. Size:3377K  jiejie micro
 jjt30n65sy.pdf pdf_icon

JJT30N65SS

650V 30A Trench and Field Stop IGBTJJT30N65SYKey performance:TO-220 V =650VCE I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.1. Size:2990K  jiejie micro
 jjt30n65ue.pdf pdf_icon

JJT30N65SS

650V 30A Trench and Field Stop IGBTJJT30N65UEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

MOSTRAR MÁS

Otros transistores... JJT60N65UH , JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE , NGD8201N , JJT30N65SY , JJT30N65UE , JJT40N120HE , JJT40N120SE , , , , .

 

 
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