JJT40N120HE Todos los transistores

 

JJT40N120HE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT40N120HE
   Tipo de transistor: IGBT + Diode
   Código de marcado: T40120HE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 681 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 76 nS
   Coesⓘ - Capacitancia de salida, typ: 189 pF
   Qgⓘ - Carga total de la puerta, typ: 263 nC
   Paquete / Cubierta: TO247
 

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JJT40N120HE Datasheet (PDF)

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JJT40N120HE

1200V 40A Trench and Field Stop IGBTJJT40N120HEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability High ruggedness performance RoHS compliantApplications: Welding

 5.1. Size:4286K  jiejie micro
jjt40n120ue.pdf pdf_icon

JJT40N120HE

1200V 40A Trench and Field Stop IGBTJJT40N120UEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability High ruggedness performance RoHS compliantApplications: Welding

 5.2. Size:4287K  jiejie micro
jjt40n120se.pdf pdf_icon

JJT40N120HE

1200V 40A Trench and Field Stop IGBTJJT40N120SEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability Short circuit withstands time 10s High ruggedness performance Ro

 7.1. Size:1403K  jiejie micro
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JJT40N120HE

1350V 40A Trench and Field Stop IGBTJJT40N135UEKey performance: V =1350VCETO-247 I =40A@T =100C C V =2.0VCE(sat)Features: Trench and field-stop technology High speed switchingGC Positive VCE (sat) temperature coefficient.E Fast switching and short tail current. High ruggedness performanceApplications: Induction cooking R

Otros transistores... JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE , JJT30N65SS , JJT30N65SY , JJT30N65UE , IKW50N60T , JJT40N120SE , , , , , , , .

 

 
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