IXGT50N60B Todos los transistores

 

IXGT50N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT50N60B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 150

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

Búsqueda de reemplazo de IXGT50N60B - IGBT

 

IXGT50N60B Datasheet (PDF)

1.1. ixgt50n60c2.pdf Size:584K _ixys

IXGT50N60B
IXGT50N60B

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

1.2. ixgh50n60b2 ixgt50n60b2.pdf Size:585K _ixys

IXGT50N60B
IXGT50N60B

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by leads) 75 A (IXGT) IC11

 1.3. ixgh50n60c2 ixgt50n60c2.pdf Size:586K _ixys

IXGT50N60B
IXGT50N60B

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

1.4. ixgt50n60b2.pdf Size:583K _ixys

IXGT50N60B
IXGT50N60B

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by leads) 75 A (IXGT) IC11

Otros transistores... IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , FGA25N120ANTD , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 .

 

 
Back to Top

 


IXGT50N60B
  IXGT50N60B
  IXGT50N60B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: FMG2G400US60 | NGD8201AN | MSG50N350FH | GT15Q102 | PSTG75HST12 | PSTG50HST12 | PSTG25HTT12 | PSTG25HDT12 | PS21265-P | PS21265-AP |

 

 

 
Back to Top