IXGT60N60 Todos los transistores

 

IXGT60N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGT60N60
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 290 pF
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXGT60N60 Datasheet (PDF)

 ..1. Size:94K  ixys
 ixgt60n60.pdf pdf_icon

IXGT60N60

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,

 ..2. Size:95K  ixys
 ixgh60n60 ixgk60n60 ixgt60n60.pdf pdf_icon

IXGT60N60

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,

 0.1. Size:236K  ixys
 ixgt60n60c3d1.pdf pdf_icon

IXGT60N60

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25

 0.2. Size:583K  ixys
 ixgh60n60c2 ixgt60n60c2.pdf pdf_icon

IXGT60N60

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

MOSTRAR MÁS

Otros transistores... IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , FGA60N65SMD , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B .

History: NCE07T60BI | SGT60N60FD1PS | YGW50N65F1A

 

 
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