IXGX120N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGX120N60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 660 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1(max) V @25℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 680 pF
Encapsulados: PLUS247
Búsqueda de reemplazo de IXGX120N60B IGBT
- Selección ⓘ de transistores por parámetros
IXGX120N60B datasheet
ixgk120n60b ixgx120n60b.pdf
HiPerFASTTM IGBT IXGK 120N60B VCES = 600 V IXGX 120N60B IC25 = 200 A VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXGX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C 200 A TO-264 AA IC90 TC = 90 C 120 A (IXGK) IL(RMS) External lead limit 76 A ICM TC
ixgx120n60b.pdf
HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B VCE(sat) 2.1V TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 200 A IC90 TC = 90 C 120 A ILRMS Termin
ixgk120n60b3-ixgx120n60b3.pdf
VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG
ixgx120n60b3.pdf
VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG
Otros transistores... IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IKW75N60T , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa1210 | 2sc3792 | mps2907a transistor equivalent | 2sc1626 | b560 transistor | 2sc632a | c3856 | 30100 transistor







