IXSH30N60A Todos los transistores

 

IXSH30N60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXSH30N60A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 130 nS
   Coesⓘ - Capacitancia de salida, typ: 240 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXSH30N60A Datasheet (PDF)

 ..1. Size:263K  ixys
 ixsh30n60 ixsh30n60a ixsm30n60 ixsm30n60a.pdf pdf_icon

IXSH30N60A

 0.1. Size:81K  ixys
 ixsh30n60u1 ixsh30n60au1.pdf pdf_icon

IXSH30N60A

VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 VHigh Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 VCombi PacksShort Circuit SOA CapabilityTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gat

 5.1. Size:81K  ixys
 ixsh30n60u1.pdf pdf_icon

IXSH30N60A

VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 VHigh Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 VCombi PacksShort Circuit SOA CapabilityTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gat

 5.2. Size:131K  ixys
 ixsh30n60 ixst30n60.pdf pdf_icon

IXSH30N60A

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

MOSTRAR MÁS

Otros transistores... IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , IXSH25N100 , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 , SGH80N60UFD , IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A .

History: APTGF500U60D4 | KGT15N120NDS | NGTB15N135IHRWG | MPBW20N65EF | IKB30N65EH5 | XNF6N60T | IXGP24N60C4

 

 
Back to Top

 


 
.