IXSH30N60B Todos los transistores

 

IXSH30N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSH30N60B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 240 pF

Encapsulados: TO247

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IXSH30N60B datasheet

 ..1. Size:129K  ixys
ixsh30n60b.pdf pdf_icon

IXSH30N60B

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM

 0.1. Size:518K  ixys
ixsh30n60b2d1.pdf pdf_icon

IXSH30N60B

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C

 0.2. Size:616K  ixys
ixsh30n60b2d1 ixst30n60b2d1.pdf pdf_icon

IXSH30N60B

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C

 0.3. Size:117K  ixys
ixsh30n60bd1.pdf pdf_icon

IXSH30N60B

High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9

Otros transistores... IXSH24N60U1 , IXSH25N100 , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 , IXSH30N60A , IXSH30N60AU1 , CRG40T60AK3HD , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A , IXSH35N140A , IXSH40N60 .

 

 

 


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