IXSH45N100 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSH45N100
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Coesⓘ - Capacitancia de salida, typ: 300 pF
Qgⓘ - Carga total de la puerta, typ: 165 nC
Paquete / Cubierta: TO247
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IXSH45N100 Datasheet (PDF)
ixsh45n100.pdf
Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A
ixsh45n120.pdf
High Voltage, IXSH 45N120 VCES = 1200 VLow VCE(sat) IGBT IC25 = 75 AVCE(sat) = 3 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C45 AE = Em
ixsh45n120b ixst45n120b.pdf
IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26
ixsh45n120b.pdf
IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26
Otros transistores... IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , CRG75T60AK3HD , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2