IXSH45N100 Todos los transistores

 

IXSH45N100 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXSH45N100
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 150 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Qgⓘ - Carga total de la puerta, typ: 165 nC
   Paquete / Cubierta: TO247
 

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IXSH45N100 Datasheet (PDF)

 ..1. Size:102K  ixys
 ixsh45n100.pdf pdf_icon

IXSH45N100

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A

 6.1. Size:91K  ixys
 ixsh45n120.pdf pdf_icon

IXSH45N100

High Voltage, IXSH 45N120 VCES = 1200 VLow VCE(sat) IGBT IC25 = 75 AVCE(sat) = 3 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C45 AE = Em

 6.2. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXSH45N100

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

 6.3. Size:53K  ixys
 ixsh45n120b.pdf pdf_icon

IXSH45N100

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

MOSTRAR MÁS

Otros transistores... IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , CRG75T60AK3HD , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 .

History: APTGT150X120E3 | MIXA81WB1200TEH | IRG7RC10FD | FGW25N120WD | 2MBI150L-120

 

 
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