IXSN50N60BD2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSN50N60BD2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 440 pF
Encapsulados: SOT227B
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IXSN50N60BD2 datasheet
ixsn50n60bd2.pdf
IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr
ixsn50n60bd3.pdf
IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr
ixsn52n60au1.pdf
IGBT with Diode IXSN 52N60AU1 VCES = 600 V IC25 = 80 A Combi Pack VCE(sat) = 3 V 3 Short Circuit SOA Capability 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C80 A 3 IC90 TC = 90 C40 A 1 = Emitter , 3 = Collector IC
ixsn55n120a.pdf
VCES = 1200 V High Voltage IGBT IXSN 55N120A IC25 = 110 A VCE(sat) = 4 V 3 Short Circuit SOA Capability 2 Preliminary Data 4 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VCES TJ = 25 C to 150 C 1200 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 110 A IC90 TC = 90 C55 A 1 = Emitter 3 = Co
Otros transistores... IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , STGW60V60DF , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 .
History: IRGIB15B60KD1P | IRGB4630DPBF
History: IRGIB15B60KD1P | IRGB4630DPBF
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