IXST30N60C Todos los transistores

 

IXST30N60C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXST30N60C

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 55A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXST30N60C Datasheet (PDF)

1.1. ixsh30n60b2d1 ixst30n60b2d1.pdf Size:616K _ixys

IXST30N60C
IXST30N60C

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25C48 A IC110 TC = 110C30 A IF(110)

1.2. ixsh30n60 ixst30n60.pdf Size:131K _ixys

IXST30N60C
IXST30N60C

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V (TAB) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25C55 A IC90 TC = 90C30 A G ICM TC = 25C, 1

 1.3. ixst30n60c.pdf Size:132K _igbt_a

IXST30N60C
IXST30N60C

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC = 25°C55 A IC90 TC = 90°C30 A G ICM

1.4. ixst30n60b2d1.pdf Size:518K _igbt_a

IXST30N60C
IXST30N60C

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V C (TAB) G C E IC25 TC = 25°C48 A IC110 TC = 110°C

 1.5. ixst30n60b.pdf Size:129K _igbt_a

IXST30N60C
IXST30N60C

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC = 25°C55 A IC90 TC = 90°C30 A G ICM

1.6. ixst30n60cd1.pdf Size:71K _igbt_a

IXST30N60C
IXST30N60C

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous ±20 V VGEM Transient ±30 V C G

1.7. ixst30n60bd1.pdf Size:117K _igbt_a

IXST30N60C
IXST30N60C

High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G VGES Continuous ±20 V C E VGEM Transient ±30 V TO-268 (D3) IC25 TC = 25°C55 A (IXST) IC9

Otros transistores... IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IRG4PC50F , IXST30N60CD1 , IXST40N60B , IXST40N60BD1 , IXST40N60CD1 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S .

 

 
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