IXSX50N60AU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSX50N60AU1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
trⓘ - Tiempo de subida, typ: 220 nS
Encapsulados: TO247
Búsqueda de reemplazo de IXSX50N60AU1 IGBT
- Selección ⓘ de transistores por parámetros
IXSX50N60AU1 datasheet
ixsx50n60au1 ixsx50n60au1s.pdf
Preliminary data VCES = 600 V IXSX50N60AU1 IGBT with Diode IXSX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack Short Circuit SOA Capability TO-247 Hole-less SMD (50N60AU1S) C (TAB) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-247 Hole-less VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (50N60AU1) VGES Continuous 20 V VGEM Transient 30 V
ixsx50n60bd1.pdf
IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V TO-264 AA (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A
ixsx50n60bu1.pdf
IGBT with Diode IXSK 50N60BU1 VCES = 600 V IXSX 50N60BU1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-264 AA VGES Continuous 20 V (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A
Otros transistores... IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 , IXSX40N60CD1 , GT30F132 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , KP810A , KP810B , KP810V .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
ru7088r mosfet | mp40 transistor | fgpf4636 datasheet | 2sc1945 | c2383 | 2sb681 | bc639 equivalent | bd138 transistor equivalent