MGP15N43CL Todos los transistores

 

MGP15N43CL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGP15N43CL

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 136 W

|Vce|ⓘ - Tensión máxima colector-emisor: 430 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 22 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

Encapsulados: TO220

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MGP15N43CL datasheet

 ..1. Size:103K  1
mgp15n43cl.pdf pdf_icon

MGP15N43CL

 7.1. Size:91K  onsemi
mgp15n40cl mgb15n40cl.pdf pdf_icon

MGP15N43CL

MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injec

 8.1. Size:99K  1
mgb15n35clt4 mgp15n35cl.pdf pdf_icon

MGP15N43CL

MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped N CHANNEL IGBT protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 15 A, 350

 8.2. Size:104K  1
mgp15n38cl.pdf pdf_icon

MGP15N43CL

Otros transistores... MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , BT40T60ANF , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED .

History: GA50TS120U | GA500TD60U

 

 

 


History: GA50TS120U | GA500TD60U

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