MGP15N43CL Todos los transistores

 

MGP15N43CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGP15N43CL
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 136 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 22 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: TO220

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MGP15N43CL Datasheet (PDF)

 ..1. Size:103K  1
mgp15n43cl.pdf

MGP15N43CL
MGP15N43CL

 7.1. Size:91K  onsemi
mgp15n40cl mgb15n40cl.pdf

MGP15N43CL
MGP15N43CL

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec

 8.1. Size:99K  1
mgb15n35clt4 mgp15n35cl.pdf

MGP15N43CL
MGP15N43CL

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

 8.2. Size:104K  1
mgp15n38cl.pdf

MGP15N43CL
MGP15N43CL

 8.3. Size:125K  motorola
mgp15n60u.pdf

MGP15N43CL
MGP15N43CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provide

 8.4. Size:120K  motorola
mgp15n60urev0.pdf

MGP15N43CL
MGP15N43CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provides fast sw

 8.5. Size:250K  onsemi
mgp15n35cl-d.pdf

MGP15N43CL
MGP15N43CL

MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig

Otros transistores... MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , IHW20N120R3 , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED .

 

 
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