MGP15N43CL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP15N43CL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 136 W
|Vce|ⓘ - Tensión máxima colector-emisor: 430 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 22 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Encapsulados: TO220
Búsqueda de reemplazo de MGP15N43CL IGBT
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MGP15N43CL datasheet
mgp15n40cl mgb15n40cl.pdf
MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injec
mgb15n35clt4 mgp15n35cl.pdf
MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped N CHANNEL IGBT protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 15 A, 350
Otros transistores... MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , BT40T60ANF , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED .
History: GA50TS120U | GA500TD60U
History: GA50TS120U | GA500TD60U
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