MGP20N35CL Todos los transistores

 

MGP20N35CL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGP20N35CL

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 11 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO220

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MGP20N35CL datasheet

 ..1. Size:176K  motorola
mgp20n35cl.pdf pdf_icon

MGP20N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N35CL/D Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr

 0.1. Size:200K  motorola
mgp20n35clrev0xx.pdf pdf_icon

MGP20N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N35CL/D Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr

 8.1. Size:82K  motorola
mgp20n14cl.pdf pdf_icon

MGP20N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for

 8.2. Size:77K  motorola
mgp20n14clrev1.pdf pdf_icon

MGP20N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for

Otros transistores... MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , GT30F126 , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D .

History: BT40T120CKF | SKM195GB062D

 

 

 


History: BT40T120CKF | SKM195GB062D

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