MGP20N40CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP20N40CL
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 11 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 6000 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Qgⓘ - Carga total de la puerta, typ: 45 nC
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
MGP20N40CL Datasheet (PDF)
mgp20n40cl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N40CL/DAdvanced InformationMGP20N40CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr
mgp20n40clrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N40CL/DAdvanced InformationMGP20N40CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr
mgp20n14cl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for
mgp20n14clrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for
Otros transistores... MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , GT30G124 , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D .
History: STGP30H60DF | AIGW50N65H5
History: STGP30H60DF | AIGW50N65H5
Liste
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