MGP20N40CL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP20N40CL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 11 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
trⓘ - Tiempo de subida, typ: 6000 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Encapsulados: TO220
Búsqueda de reemplazo de MGP20N40CL IGBT
- Selección ⓘ de transistores por parámetros
MGP20N40CL datasheet
mgp20n40cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr
mgp20n40clrev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr
mgp20n14cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
mgp20n14clrev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitry for
Otros transistores... MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , IHW20N120R3 , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D .
History: BT40T120CKF | SKM195GB062D
History: BT40T120CKF | SKM195GB062D
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c2075 transistor | ecg123 | 2n5551 transistor equivalent | 13009 datasheet | 3dd15d transistor | pa110bda | 2sb1243 | a1123 transistor