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MGP20N40CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGP20N40CL

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150W

Tensión colector-emisor (Vce): 400V

Voltaje de saturación colector-emisor (Vce sat): 1.8V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 2000

Capacitancia de salida (Cc), pF: 2800pF

Empaquetado / Estuche: TO220

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MGP20N40CL Datasheet (PDF)

1.1. mgp20n40clrev1.pdf Size:133K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on

1.2. mgp20n40cl.pdf Size:138K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on

 4.1. mgp20n35clrev0xx.pdf Size:200K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N35CL/D Advanced Information MGP20N35CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on

4.2. mgp20n14clrev1.pdf Size:77K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on) = 1

 4.3. mgp20n14cl.pdf Size:82K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N14CL/D Product Preview MGP20N14CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on) = 1

4.4. mgp20n60u.pdf Size:125K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's? Data Sheet MGP20N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 20 A @ 90C voltageblocking capability. It also provides low onvolta

 4.5. mgp20n35cl.pdf Size:176K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N35CL/D Advanced Information MGP20N35CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on

4.6. mgp20n60urev0.pdf Size:120K _motorola

MGP20N40CL
MGP20N40CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Product Preview MGP20N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 20 A @ 90C voltageblocking capability. It also provides fast switching char

Otros transistores... MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , IRG7R313U , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D .

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