MSAGX75L60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSAGX75L60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 4000pF pF
Encapsulados: SMD-P
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MSAGX75L60B datasheet
msagx75l60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAGX75L60A Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ
msagx75f60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAGX75F60A Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 2.7 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon requ
msagx60f60a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGX60F60A FAX (714) 966-5256 MSAHX60F60A Features 600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 60 Amps Hermetically sealed, surface mount power package Low package inductance 2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa
Otros transistores... MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , GT30F131 , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B .
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