NTE3312 Todos los transistores

 

NTE3312 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTE3312

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 8

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 1150

Empaquetado / Estuche: TO3P

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NTE3312 Datasheet (PDF)

4.1. nte3310.pdf Size:43K _no

NTE3312
NTE3312

NTE3310 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.2. nte3311.pdf Size:43K _no

NTE3312
NTE3312

NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 5.1. nte3323.pdf Size:45K _no

NTE3312
NTE3312

NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5.2. nte3300.pdf Size:44K _no

NTE3312
NTE3312

NTE3300 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 5.3. nte3301.pdf Size:44K _no

NTE3312
NTE3312

NTE3301 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

5.4. nte3303.pdf Size:45K _no

NTE3312
NTE3312

NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 5.5. nte3320.pdf Size:43K _no

NTE3312
NTE3312

NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .

5.6. nte3322.pdf Size:69K _no

NTE3312
NTE3312

NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

5.7. nte3302.pdf Size:44K _no

NTE3312
NTE3312

NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Otros transistores... MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , STGW38IH130D , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A .

 

 
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