IGC06R60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC06R60D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 46 pF
Paquete / Cubierta: CHIP
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IGC06R60D Datasheet (PDF)
igc06r60d.pdf
IGC06R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param
igc06r60de.pdf
IGC06R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist
sigc06t120cs.pdf
SIGC06T120CS IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip SGP02N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4115-SIGC06T120CS 1200V 2A 2.45 x 2.25
sigc06t60.pdf
SIGC06T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack
sigc06t60ge.pdf
SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc06t65e.pdf
SIGC06T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC06T65E 650
sigc06t60e.pdf
SIGC06T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageSI
sigc06t60g.pdf
SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
Otros transistores... IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IXRH40N120 , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2