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SGH15N60RUFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGH15N60RUFD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 15A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 70

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO3P

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SGH15N60RUFD Datasheet (PDF)

1.1. sgh15n60rufd.pdf Size:612K _fairchild_semi

SGH15N60RUFD

1.2. sgh15n60rufd.pdf Size:268K _samsung

SGH15N60RUFD
SGH15N60RUFD

CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.3. sgh15n60rufd.pdf Size:649K _igbt

SGH15N60RUFD
SGH15N60RUFD

March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

Otros transistores... SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , CT60AM-18F , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF .

 


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