SGH40N60UF Todos los transistores

 

SGH40N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGH40N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 160 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 170 pF
   Qgⓘ - Carga total de la puerta, typ: 97 nC
   Paquete / Cubierta: TO3P

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SGH40N60UF Datasheet (PDF)

 ..1. Size:570K  fairchild semi
sgh40n60uf.pdf

SGH40N60UF
SGH40N60UF

IGBTSGH40N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

 ..2. Size:224K  samsung
sgh40n60uf.pdf

SGH40N60UF
SGH40N60UF

N-CHANNEL IGBT SGH40N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageV

 0.1. Size:624K  fairchild semi
sgh40n60ufd.pdf

SGH40N60UF
SGH40N60UF

IGBTSGH40N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

 0.2. Size:263K  samsung
sgh40n60ufd.pdf

SGH40N60UF
SGH40N60UF

N-CHANNEL IGBT SGH40N60UFDFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 42nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 0.3. Size:603K  onsemi
sgh40n60ufd.pdf

SGH40N60UF
SGH40N60UF

IGBTSGH40N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

Otros transistores... SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , FGPF4536 , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD .

 

 
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