SGP13N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SGP13N60UFD Datasheet (PDF)

..1. Size:615K fairchild semi
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IGBTSGP13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spee

..2. Size:274K samsung
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N-CHANNEL IGBT SGP13N60UFDFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 37nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharac

4.1. Size:537K fairchild semi
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IGBTSGP13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed s

4.2. Size:230K samsung
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N-CHANNEL IGBT SGP13N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

Otros transistores... SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , GT30J127 , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD .