SGP13N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGP13N60UFD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 60 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 63 pF
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SGP13N60UFD - IGBT
SGP13N60UFD Datasheet (PDF)
sgp13n60ufd.pdf
IGBTSGP13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spee
sgp13n60ufd.pdf
N-CHANNEL IGBT SGP13N60UFDFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 37nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharac
sgp13n60uf.pdf
IGBTSGP13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed s
sgp13n60uf.pdf
N-CHANNEL IGBT SGP13N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage
Otros transistores... SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , MBQ50T65FDSC , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2