SGP20N60RUF Todos los transistores

 

SGP20N60RUF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP20N60RUF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 190 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 115 pF
   Qgⓘ - Carga total de la puerta, typ: 83 nC
   Paquete / Cubierta: TO220
 

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SGP20N60RUF Datasheet (PDF)

 ..1. Size:231K  samsung
 sgp20n60ruf.pdf pdf_icon

SGP20N60RUF

N-CHANNEL IGBT SGP20N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

 6.1. Size:358K  infineon
 sgp20n60 sgw20n60.pdf pdf_icon

SGP20N60RUF

SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 6.2. Size:382K  infineon
 sgp20n60hs sgw20n60hs rev2 5g.pdf pdf_icon

SGP20N60RUF

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

 6.3. Size:359K  infineon
 sgp20n60.pdf pdf_icon

SGP20N60RUF

SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

MOSTRAR MÁS

Otros transistores... SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , IHW20N120R3 , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L .

History: IXGK50N60A2D1 | IRG4BC30KD | DL2G50SH6A | NGTG50N60FLWG | BSM600GA120DLC | IRGP4640D | IKY75N120CH3

 

 
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