SGS5N60RUFD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SGS5N60RUFD datasheet

..1. Size:614K fairchild semi
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April 2001 IGBT SGS5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 5A series is

4.1. Size:588K 1
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April 2001 IGBT SGS5N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 5A des

9.1. Size:289K fairchild semi
sgs5n150uf.pdf pdf_icon

IGBT SGS5N150UF General Description Features Fairchild s Insulated Gate Bipolar Transistor (IGBT) High Speed Switching provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 4.7 V @ IC = 5A SGS5N150UF is designed for the Switching Power High Input Impedance Supply applications. Application Switching Power Supply - High Input Voltage Off-line Co

Otros transistores... SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGP30N60 , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF .