SGS5N60RUFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SGS5N60RUFD Datasheet (PDF)

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April 2001 IGBTSGS5N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5Aseries is

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April 2001 IGBTSGS5N60RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5Ades

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IGBTSGS5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGS5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co

Otros transistores... SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , IKW30N60H3 , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF .