SGW6N60UF Todos los transistores

 

SGW6N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGW6N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 22 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

SGW6N60UF Datasheet (PDF)

 ..1. Size:219K  samsung
 sgw6n60uf.pdf pdf_icon

SGW6N60UF

N-CHANNEL IGBT SGW6N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageVG

 0.1. Size:268K  samsung
 sgw6n60ufd.pdf pdf_icon

SGW6N60UF

N-CHANNEL IGBT SGW6N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 35nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

Otros transistores... SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , GT30F125 , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D .

History: IXGH10N60A | 2MBI300NB-060 | AOTF5B65M1 | APTGF100A120T | STGW35NB60SD | MGB15N40CL | BRG10N120D

 

 
Back to Top

 


 
.