HIH30N140IH-DB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HIH30N140IH-DB
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 330 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 85 pF
Paquete / Cubierta: TO3PN
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HIH30N140IH-DB Datasheet (PDF)
hih30n140ih-db.pdf
Feb 2023HIH30N140IH-DB1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-3PN SYMBOL
hih30n120tf.pdf
Dec 2013VCES = 1200 VIC = 30 AHIH30N120TF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-3PFEATURES 1200V Field Stop Trench TechnologyG High Speed SwitchingCE Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Cont
hih30n60bp.pdf
Dec 2013VCES = 600 VIC = 30 AHIH30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum Ratings Symbol Parameter Value UnitsVCES Collector-
Otros transistores... SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , FGH75T65UPD , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D .
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