HIA30N140IH-DA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HIA30N140IH-DA
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 330 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.3 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 85 pF
Qgⓘ - Carga total de la puerta, typ: 178 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de HIA30N140IH-DA - IGBT
HIA30N140IH-DA Datasheet (PDF)
hia30n140ih-da.pdf
September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY
hia30n140cih-da.pdf
Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL
hia30n65t-sa.pdf
Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
hia30n60bp.pdf
Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-
Otros transistores... SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , GT30F125 , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2