SKM100GAY173D Todos los transistores

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SKM100GAY173D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM100GAY173D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 625W

Tensión colector-emisor (Vce): 1700V

Voltaje de saturación colector-emisor (Vce sat): 3.8V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 100A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche:

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SKM100GAY173D Datasheet (PDF)

2.1. skm100gal12t4.pdf Size:498K _igbt

SKM100GAY173D
SKM100GAY173D

SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 160 A Tj = 175 °C Tc =80°C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GAL12T

2.2. skm100gal123d.pdf Size:554K _igbt

SKM100GAY173D
SKM100GAY173D



3.1. skm100gd063dl.pdf Size:778K _igbt

SKM100GAY173D
SKM100GAY173D



3.2. skm100gb12t4.pdf Size:480K _igbt

SKM100GAY173D
SKM100GAY173D

SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 160 A Tj = 175 °C Tc =80°C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GB12T4 Tc =80°C

3.3. skm100gb063d.pdf Size:796K _igbt

SKM100GAY173D
SKM100GAY173D



3.4. skm100gb12v.pdf Size:253K _igbt

SKM100GAY173D
SKM100GAY173D

SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 159 A Tj = 175 °C Tc =80°C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GB12V Tc =80°C 91 A IFnom 1

3.5. skm100gb173d.pdf Size:556K _igbt

SKM100GAY173D
SKM100GAY173D



3.6. skm100gb176d.pdf Size:788K _igbt

SKM100GAY173D
SKM100GAY173D



3.7. skm100gb123d.pdf Size:554K _igbt

SKM100GAY173D
SKM100GAY173D



3.8. skm100gb12t4g.pdf Size:398K _igbt

SKM100GAY173D
SKM100GAY173D

SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 154 A Tj = 175 °C Tc =80°C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 118 A Tj = 175 °C SKM100GB12T4G Tc =80°

Otros transistores... SGW6N60UF , SGW6N60UFD , SKD100GAL123D , SKD40GAL123D , SKD75GAL123D , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , CT60AM-20 , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras