IGC11T120T6L Todos los transistores

IGC11T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

IGC11T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC11T120T8L 1200V 8A 3

SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules positive temperature coefficient easy paralleling Applications G E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155- SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2

SIGC11T60NC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules positive temperature coefficient easy paralleling Applications G E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4158- SIGC11T60NC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2 Ra