SKM150GB174D Todos los transistores

 ..1. Size:110K  semikron
 skm150gb174d.pdf

SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 150 GB 174 D IC; ICN Tcase = 25/60 C 180 / 150 A ICM Tcase = 25/60 C; tp = 1 ms 360 / 300 A VGES 20 V Preliminary Data Ptot per IGBT, Tcase = 25 C 1080 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4) 3400 V humidity DIN 40 040

 4.1. Size:706K  semikron
 skm150gb173d.pdf

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 skm150gb125d.pdf

SEMITRANS M Absolute Maximum Ratings Values Ultra Fast IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 150 GB 125 D IC Tcase = 25/80 C 150 / 100 4) A ICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) A Preliminary Data 5) VGES 20 V Ptot per IGBT, Tcase = 25 C 1040 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 400

 5.2. Size:491K  semikron
 skm150gb12v.pdf

SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12V Tc =80 C 141 A IFnom

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 skm150gb123d.pdf

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 skm150gb12t4.pdf

SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12T4 Tc =80 C

 5.5. Size:435K  semikron
 skm150gb12vg.pdf

SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 222 A Tj = 175 C Tc =80 C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 187 A Tj = 175 C SKM150GB12VG Tc =80 C 140 A IFno

 5.6. Size:401K  semikron
 skm150gb12t4g.pdf

SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 223 A Tj = 175 C Tc =80 C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 183 A Tj = 175 C SKM150GB12T4G Tc =80

 5.7. Size:702K  semikron
 skm150gb124d.pdf