2N3824 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VG

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 G H Emitter Base Collector J A D Collector B Millimeter REF. Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0

Databook.fxp 1/13/99 2 09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/ C At 25 C free air temperat

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipatio