BUK9245-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9245-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 14 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: DPAK

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BUK9245-55A Datasheet (PDF)

7.1. Size:296K philips
buk9245.pdf

BUK9245-55ATrenchMOS logic level FETRev. 01 11 October 2001 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9245-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic le

8.1. Size:291K philips
buk9240-100a.pdf

BUK9240-100ATrenchMOS logic level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9240-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

8.2. Size:962K nxp
buk9240-100a.pdf

BUK9240-100AN-channel TrenchMOS logic level FETRev. 02 15 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

8.3. Size:287K inchange semiconductor
buk9240-100a.pdf

isc N-Channel MOSFET Transistor BUK9240-100AFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 38.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid driv

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