BUK9245-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9245-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: DPAK

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BUK9245-55A datasheet

 7.1. Size:296K  philips
buk9245.pdf pdf_icon

BUK9245-55A

BUK9245-55A TrenchMOS logic level FET Rev. 01 11 October 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9245-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic le

 8.1. Size:291K  philips
buk9240-100a.pdf pdf_icon

BUK9245-55A

BUK9240-100A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

 8.2. Size:962K  nxp
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BUK9245-55A

BUK9240-100A N-channel TrenchMOS logic level FET Rev. 02 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 8.3. Size:287K  inchange semiconductor
buk9240-100a.pdf pdf_icon

BUK9245-55A

isc N-Channel MOSFET Transistor BUK9240-100A FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 38.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid driv

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